2007. 3. 20 1/2 semiconductor technical data SMAB34A schottky barrier type diode revision no : 2 switching type power supply applications. features low profile surface mount package. low power loss, high efficiency. for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. application switching power supply. dc/dc converter. home appliances, office equipment. telecommunication. maximum rating (ta=25 ) characteristic symbol rating unit maximum repetitive peak reverse voltage v rrm 40 v average output rectitifed current i o 3 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 70 a junction temperature t j -40 150 storage temperature range t stg -40 150 sma(1) unit : mm millimeters c c e e f f 1 2 g g d d a a b b dim 5.0 0.2 + _ 2.525 0.12 + _ 1.45 0.18 + _ 4.3 0.3 + _ 2.075 0.175 + _ 0.23 0.08 + _ 1.15 0.35 + _ e 1. anode 2. cathode electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit peak forward voltage v fm i fm =3.0a - - 0.52 v repetitive peak reverse current i rrm v rrm =rated - - 0.2 ma thermal resistance r th(j-l) junction to lead - - 23 /w r th(j-a) junction to ambient (on fr-4 pcb) - - 108 type name cathode mark marking b34a lot no.
2007. 3. 20 2/2 SMAB34A revision no : 2 i f - v f forward voltage v f (mv) forward current i f (a) number of cycles at 60hz peak surge forward current i (a) 1 0 20 40 80 60 fsm 10 surge forward current (non - repetitive) 100 ta=25 c f=60hz p f - i f forward current i f (a) 0 0.0 0.5 1.0 1.5 2.5 2.0 forward power p f (w) 123456 tp t t l - i f forward current (a) 0 0 20 40 60 80 100 120 160 140 123 maximum allowable temperature tl max ( c) 0 200 400 600 800 10 0.1 0.01 1 t l =150 c t j =125 c t l =100 c t l =25 c i r - v r reverse voltage v r (v) reverse current i r (a) 0 10203040 5 15253545 100 10 0.1 0.001 0.01 1 t l =125 c t l =75 c t l =150 c t l =50 c t l =100 c t l =25 c d=tp/t 0.1 0.2 0.5 d=0.8 dc
|
